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| Issue Year | Title | Author(s) | Type | Views | Downloads |
|---|---|---|---|---|---|
| 2016 | Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor | Rogachev, I.A.; Knyazkov, A.V.; Meshkov, O.I.; Kurochka, A.S. | Article | 1382262 | 3380464 |